期刊
APPLIED PHYSICS LETTERS
卷 82, 期 8, 页码 1299-1301出版社
AMER INST PHYSICS
DOI: 10.1063/1.1555282
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We report on the performance of AlGaN/GaN/AlN heterostructure field-effect transistors (HFETs) grown over slightly-off c-axis, single-crystal, bulk AlN substrates. Dc and rf characteristics of these devices were comparable to HFETs grown on semi-insulating SiC. The obtained results demonstrate that bulk AlN substrates are suitable for fabricating high-power microwave AlGaN/GaN transistors. (C) 2003 American Institute of Physics.
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