期刊
JOURNAL OF APPLIED PHYSICS
卷 93, 期 5, 页码 2418-2423出版社
AMER INST PHYSICS
DOI: 10.1063/1.1539916
关键词
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Plan-view transmission electron microscopy (TEM) and Raman microspectroscopy were used to identify metastable silicon phases in nanoindentation. A mixture of metastable Si-III and Si-XII phases was observed by both selected area diffraction in TEM and Raman analysis. High resolution TEM observations provided detailed structural information about the metastable phases of silicon and the interfaces between different silicon structures. A mechanism of dislocation-induced lattice rotation that leads,to a phase transition and distortion-induced amorphization in nanoindentation is proposed. (C) 2003 American Institute of Physics.
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