4.6 Article

High-resolution transmission electron microscopy study of metastable silicon phases produced by nanoindentation

期刊

JOURNAL OF APPLIED PHYSICS
卷 93, 期 5, 页码 2418-2423

出版社

AMER INST PHYSICS
DOI: 10.1063/1.1539916

关键词

-

向作者/读者索取更多资源

Plan-view transmission electron microscopy (TEM) and Raman microspectroscopy were used to identify metastable silicon phases in nanoindentation. A mixture of metastable Si-III and Si-XII phases was observed by both selected area diffraction in TEM and Raman analysis. High resolution TEM observations provided detailed structural information about the metastable phases of silicon and the interfaces between different silicon structures. A mechanism of dislocation-induced lattice rotation that leads,to a phase transition and distortion-induced amorphization in nanoindentation is proposed. (C) 2003 American Institute of Physics.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据