期刊
BRAZILIAN JOURNAL OF PHYSICS
卷 33, 期 1, 页码 94-97出版社
SOCIEDADE BRASILEIRA FISICA
DOI: 10.1590/S0103-97332003000100006
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Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (0) without electric field is about 3.9 W. The field-emission current-voltage measurements indicate a threshold voltage ranging from 8.97x10(6) to 9.64x10(6) V/m and a work function (phi) about.0.3 eV. These results show that boron doped diamond films exhibit a negative electron affinity in high electric field.
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