The low-temperature electron transport on semiconductor surfaces has been studied using an ultrahigh-vacuum, variable temperature scanning tunneling microscope (STM). The STM I(V) spectroscopy performed at various temperatures has made it possible to investigate the temperature dependence (300 K to 35 K) of the surface conductivity of three different semiconductor surfaces: highly doped n-type Si(100), p-type Si(100), and hydrogenated C(100). Low temperature freezing of specific surface electronic channels on the highly doped n-type Si(100) and moderately doped p-type Si(100) surfaces could be achieved, whereas the total surface conductivity on the hydrogenated C(100) surface can be frozen below only 180 K. (C) 2003 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据