期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 21, 期 2, 页码 800-803出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.1563252
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To study the effects of plasma chemistries on etch characteristics. and plasma-induced damage to the optical properties, dry etching of ZnO films has been carried out using inductively coupled plasmas of Cl-2 /Ar, Cl-2 /H-2 /Ar, and CH4 /H-2 /Ar. The CH4 /H-2 /Ar chemistry showed a faster etch rate and a better surface morphology than the Cl-2-based chemistries. Etched samples in all chemistries showed a substantial decrease in the PL intensity of band-edge luminescence mainly due to the plasma-induced damage. The CH4 /H-2 /Ar chemistry showed the least degradation of the optical properties. (C) 2003 American Vacuum Society. [DOI: 10.1116/1.1563252].
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