期刊
BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN
卷 76, 期 3, 页码 659-662出版社
CHEMICAL SOC JAPAN
DOI: 10.1246/bcsj.76.659
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Solid-state dye-sensitized photo cells were fabricated with nanocrystalline SnO2 covered with a thin layer of MgO as the anode and the hole conductor CuI as the cathode. While the cell fabricated with SnO2/Ruthenium bipyridyl dye/CuI delivered almost no photocurrent with very low photovoltage, the cell SnO2 (MgO)/Ruthenium bipyridyl dye/CuI delivered a short circuit photocurrent of similar to2.5 mA cm(-2) with an open circuit voltage of similar to500 mV. Enhancement in the photocurrent and the voltages was found when the percentage of MgO to SnO2 was around 4 wt%. This is due to the formation of a thin energy barrier, which suppresses the recombination of photoelectrons.
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