Electromechanical properties of Nd-doped Bi4Ti3O12 films:: A candidate for lead-free thin-film piezoelectrics

Neodymium-doped Bi4Ti3O12 (BNT) films are evaluated for use as lead-free thin-film piezoelectrics in microelectromechanical systems. Bi4Ti3O12, Bi3.25La0.75Ti3O12, and Bi3.25Nd0.75Ti3O12 films were fabricated by chemical solution deposition on Pt/TiOx/SiO2/Si substrates. Nd substitution promoted random orientation with low (00l) diffraction peaks. The 1-mum-thick Bi3.25Nd0.75Ti3O12 film annealed at 750 degreesC exhibited a remanent polarization of 26 muC/cm(2). Typical butterfly field-induced strain loops were obtained in the BNT film capacitors. The electrically induced strain is 8.4x10(-4) under the bipolar driving field of 220 kV/cm. These results show that BNT is a promising candidate for use in lead-free thin-film piezoelectrics. (C) 2003 American Institute of Physics.