期刊
APPLIED PHYSICS LETTERS
卷 82, 期 12, 页码 1860-1862出版社
AMER INST PHYSICS
DOI: 10.1063/1.1562336
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In situ transmission electron microscopy has been used to observe the production and annealing of individual amorphous zones in silicon resulting from impacts of 200-keV Xe ions at room temperature. As has been observed previously, the total amorphous volume fraction decreases over a temperature range from room temperature to approximately 500 degreesC. When individual amorphous zones were monitored, however, there appeared to be no correlation of the annealing temperature with initial size: zones with similar starting sizes disappeared (crystallized) at temperatures anywhere from 70 degreesC to more than 400 degreesC. Frame-by-frame analysis of video recordings revealed that the recovery of individual zones is a two-step process that occurred in a stepwise manner with changes taking place over seconds, separated by longer periods of stability. (C) 2003 American Institute of Physics.
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