期刊
APPLIED PHYSICS LETTERS
卷 82, 期 13, 页码 2175-2177出版社
AMER INST PHYSICS
DOI: 10.1063/1.1559437
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We report an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer. The motivation for utilizing an undepleted absorption layer, which is similar to that in the unitraveling carrier photodiode, is to reduce the dark current. A dark current below 1 nA at a gain of 10 and a gain-bandwidth product of 160 GHz are demonstrated. (C) 2003 American Institute of Physics.
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