期刊
IEEE ELECTRON DEVICE LETTERS
卷 24, 期 4, 页码 212-214出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2003.812147
关键词
ITO; LT-GaN; MSM; UV photodetector
Nitride-based metal-semiconductor-metal (MSM) photodetectors (PDs) with low-temperature (LT) gallium nitride (GaN) cap layers and indium-tin-oxide (ITO) metal contacts were successfully fabricated. It was found that we could achieve three orders of magnitude smaller dark, current by the introduction of the LT-GaN layer. For the PDs with LT-GaN ca p layers, the maximum responsivity at 350 nm was found to be 0.1 and 0.9 A/W when the device was biased at I and 5 V, respectively. Operation speed of PDs with LT-GaN cap layers was also found to be faster than that of conventional PDs without LT-GaN cap layers.
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