Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode

High-quality, ultrathin chemical vapor deposition (CVD) hafnium oxynitride.(HfOxNy) gate dielectric with poly-silicon (Si) gate electrode has been investigated for the first time. This CVD HfOxNy gate dielectric film remains amorphous after 950 degreesC N-2 annealing. Compared with HfO2 films with poly-Si gate electrode and similar equivalent oxide thickness (EOT), CVD HfOxNy shows significantly reduction in leakage-current density and boron penetration and superior thermal and electrical stability.