期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
卷 42, 期 4B, 页码 2214-2218出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.42.2214
关键词
high electron mobility transistor; HEMT; InAlAs/InGaAs; InP; cutoff frequency; lattice-matched; pseudomorphic; gate-channel distance; two-step-recessed gate; Monte Carlo simulation
We fabricated 25-nm-gate lattice-matched InAlAs/InGaAs high electron mobility transistors (HEMTs) with a very short gate-channel distance. Using the two-step-recessed gate technique, we reduced the gate-channel distance to 4 nm; We found that the cutoff frequency f(T) increases with decreasing gate-channel distance d. This phenomenon can be explained by an increase in electron velocity under the gate with decreasing d. We obtained an f(T) of 500 GHz with a d of 4 nm. We also fabricated 25-nm-gate pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs using the same processing technique, and obtained an f(T) of 562 GHz with a d of 4 nm. This f(T) is the highest value yet reported for a transistor of any type.
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