4.4 Article Proceedings Paper

Mesoscopic island structure at GaAs /(AlGa)As interfaces grown by MBE

期刊

JOURNAL OF CRYSTAL GROWTH
卷 251, 期 1-4, 页码 85-89

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/S0022-0248(02)02399-0

关键词

atomic force microscopy; interface structure; photoluminescence; molecular beam epitaxy; semiconducting gallium arsenide

向作者/读者索取更多资源

We report the results of systematic studies of the influence of the growth temperature on the morphology of GaAs/ (Al0.3Ga0.7)As quantum well interfaces. A combination of highly selective etching and subsequent atomic force microscopy measurements was used to investigate the interface morphology. A mesoscopic island structure was observed for the first time on heterostructure interfaces grown by molecular beam epitaxy. At high growth temperatures additional mesoscopic islands are grown on smooth macroscopic extended terraces, this phenomena is the dominant contribution to the inhomogeneously broadened exciton luminescence linewidth. (C) 2002 Elsevier Science B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据