期刊
SURFACE REVIEW AND LETTERS
卷 10, 期 2-3, 页码 163-167出版社
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S0218625X03004913
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The influence of hydrogen on the reconstruction of InP(001) surfaces is studied by first-principles calculations. One-monolayer phosphorus forming oppositely buckled dimers with one hydrogen adsorbed per dimer is energetically favored for a wide range of surface preparation conditions. The electronic structure and STM image calculated for this adsorbate geometry agree well with the experimental findings obtained after annealing of MOVPE-grown InP samples. The Si(001)-like surface ordering as well as the surface band gap of more than 1 eV, supposedly arising from electron correlation effects [Li et al., Phys. Rev. Lett. 82, 1879 (1999)], are naturally explained by the hydrogen-stabilized surface structure favored by the total-energy calculations.
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