Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications

We have found excellent electrical characteristics of epitaxially grown SrTiO3 by molecular beam epitaxy (MBE) for silicon metal-insulator-semiconductor (MIS) gate dielectric application. For thin SrTiO3 film, the equivalent oxide thickness X 10(-4) (EOT) and leakage current density was 5.4 Angstrom and 7 A/cm(2) (@ V-g = V-fb - 1 V), respectively. In addition, the dispersion and hysteresis characteristics were negligible. As-deposited samples show relatively high fixed oxide charge density and interface state density, but both of these characteristics are substantially reduced by an optimizing low temperature (< 450 degreesC) post-metal forming gas anneal (FGA).