期刊
MICROELECTRONIC ENGINEERING
卷 66, 期 1-4, 页码 591-599出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0167-9317(02)00970-X
关键词
thin films; photonic devices; ferroelectric; gate oxides
We describe the application of misted chemical solution deposition (CSD) techniques to processing of ferroelectric-filled porous silicon photonic devices and of novel precursor medium- and high-dielectric constant films for gate oxide and memory applications. (C) 2002 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据