Controlled n-type doping of antimonides and arsenides using GaTe

GaTe was used as a dopant source in molecular beam epitaxy to grow n-type AlSb, GaSb, InAs, and GaAs. Carrier density was independent of host material and growth temperature between 350degreesC and 550degreesC. Calibrations based upon the binary results were applied to alloys of InAlAsSb for high-frequency transistor applications. Controlled doping of these alloys was achieved at growth temperatures of 350degreesC and 400degreesC. Growth of a nominally undoped GaAs layer immediately after use of the GaTe cell indicated no significant memory effects. (C) 2002 Elsevier Science B.V. All rights reserved.