Recognition of the atomic terminating layer in perovskite oxide substrates by reflection high energy electron diffraction

The chemical surface structure in perovskite oxides has been identified by monitoring the oscillation intensity of reflection high energy electron diffraction patterns during initial growth of MO (M=Sr, Ba) films on the perovskite substrate. This successful analysis technique is demonstrated for the film growth on A and B-site oxides terminated ABO(3) substrates. Epitaxial growth of MO thin films is dominated by chemical interaction between the growing lattice and the underlying atomic layer to follow the crystal habit of forming a more stable layer unit cell. This simple technique can be used as a substitute to relevant physical techniques such as coaxial impact-collision ion scattering spectroscopy and friction force microscopy that are currently used techniques to determine the termination layer.