High external differential efficiency and high optical gain of long-wavelength quantum dot diode laser

Long-wavelength (1.29 mum) lasers grown on GaAs and based on several planes of self-organized quantum dots in an external quantum well demonstrate significant improvement of the external differential efficiency (88%) and the characteristic temperature (150 K). This is due to suppression of carrier pile-up in the waveguide region in combination with extended range of optical loss in which the ground-state lasing survives. (C) 2002 Elsevier Science B.V. All rights reserved.