期刊
MICROELECTRONICS JOURNAL
卷 34, 期 4, 页码 259-264出版社
ELSEVIER SCI LTD
DOI: 10.1016/S0026-2692(03)00006-5
关键词
thickness dependent; dielectric strength; critical thickness; plasma-enhanced chemical vapor deposition; low-k dielectric
The experimental results obtained on the dielectric strength E-B of carbon doped silicon dioxide thin films for various film thicknesses using I-V measurements with metal-insulator-semiconductor structures suggest a new relationship between the film thickness d and the dielectric strength E-B, i.e. E-B proportional to (d - d(c))(-n). This inverse power law relationship indicates the existence of a critical thickness d(c) which may correspond to an ultimate thickness limit below which the rate of detrapping of electron charges exceeds the rate of trapping and no dielectric breakdown can be observed. The newly obtained inverse power law relationship appears to be general since it is also supported by other published dielectric strength data for both amorphous and polycrystalline polymer thin films. (C) 2003 Elsevier Science Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据