The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors

Alkali and neutralized (NH4)(2)S passivation treatment effects on the performance of MBE-grown InGaAsSb/GaSb PIN detectors have been studied. Results show the dark current density under -0.5 V bias decreased from 1.01 mA/cm(2) to 490 muA/cm(2) for alkali (NH4)(2)S solution treatment and 87 muA/cm(2) for neutralized (NH4)2S solution treatments, respectively. A modified neutralized (NH4)(2)S Passivation method for GaSb-based antimonide devices has been proposed. The XPS spectra indicated that (NH4)(2)S passivation can suppress oxidization and form Ga-S and In-S bonds on the InGaAsSb surface. (C) 2002 Elsevier Science B.V. All rights reserved.