期刊
JOURNAL OF APPLIED PHYSICS
卷 93, 期 8, 页码 4933-4935出版社
AMER INST PHYSICS
DOI: 10.1063/1.1559432
关键词
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Room-temperature carrier dynamics in InGaN/GaN multiple quantum wells are studied by employing ultrafast pump-probe spectroscopy. Specifically, the observed differential spectral signatures are characteristic of changes in the absorption coefficient through both a reduction of the quantum-confined Stark shift due to the photoinduced in-well field screening (low carrier densities) and excitonic absorption quenching (high carrier densities). The comparison of the differential absorption spectra at different injected carrier densities allows us to separate field screening from excitonic bleaching. The estimated in-well field at the transition point between field screening and excitonic bleaching is consistent with the theoretical value of the piezoelectric field in the strained InGaN well. (C) 2003 American Institute of Physics.
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