期刊
PHYSICAL REVIEW B
卷 67, 期 15, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.67.155421
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We have calculated from first principles the electronic structure of 0.5-ML upto 5-ML-thick Fe layers on top of a GaAs(100) surface. We find the Fe magnetic moment to be determined by the Fe-As distance. As segregates to the top of the Fe film, whereas Ga most likely is found within the Fe film. Moreover, we find an asymmetric in-plane contraction of our unit cell along with an expansion perpendicular to the surface. We predict the number of Fe 3d holes to increase with increasing Fe thickness on p-doped GaAs.
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