期刊
CHEMISTRY OF MATERIALS
卷 15, 期 8, 页码 1722-1727出版社
AMER CHEMICAL SOC
DOI: 10.1021/cm021328p
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HfO2 films were grown by atomic layer deposition from a mononuclear and volatile complex Hf(OCMe2CH2OMe)(4) in the temperature range of 275-425 degreesC on borosilicate glass and Si-(100) substrates. HfO2 films were formed as a result of alternate adsorption and hydrolysis steps of the hafnium precursor. The adsorption of hafnium complex was not entirely self-limiting, probably because of the thermal decomposition of the precursors. Crystalline films containing the monoclinic HfO2 phase were grown at temperatures exceeding 300-325 degreesC. The refractive index of the films varied between 1.8 and 2.0. The effective permittivities of the dielectrics in Al/HfO2/Si structures varied between 12 and 17.
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