期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 77, 期 1, 页码 105-112出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0927-0248(02)00461-0
关键词
boron-doped; amorphous; heterojunction; photovoltaic
Boron-doped amorphous carbon (a-C(B)) films,here prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of aC(B)/n-Si structure yielded an open-circuit voltage (V-oe) of 0.27 V and a short-circuit current density (J(sc)) of 2.2 mA/cm(2) under illumination (AM1.5 100mW/cm(2)). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53. respectively. (C) 2002 Elsevier Science B.V. All rights reserved.
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