期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 50, 期 5, 页码 1214-1219出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2003.813231
关键词
aluminum compounds; dielectric films; leakage currents; MIM devices; MIS devices
Aluminum nitride (AlN) thin films have been deposited on p-Si(100) and Mo--Si(100) substrates., The sputter deposited Mo was polycrystalline, predominantly showing a (110) orientation. Thin AlN films were grown under different process conditions in 4 physical vapor deposition (PVD) system to attain highly textured polycrystalline films as well as close to amorphous films. MIS and MIM structures were fabricated and electrical properties such as the dielectric constant, leakage current, and high-frequency behavior were investigated. It is found that the dielectric constant is 10 and does not change with the crystallinity of the films. High-frequency measurements up to 10 GHz show no frequency dispersion of the capacitance. The leakage current stays relatively constant between films and is believed to be Poole-Frenkel controlled. Capacitance-voltage (C-V) measurements for MIS structures revealed the presence of charges in the interface layer between the substrate and the dielectric film., The temperature dependence of the capacitance has also been studied.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据