Highly-reproducible preparation of Pb(Zr, Ti)O3 films at low deposition temperature by metal organic chemical vapor deposition

Polycrystalline Pb(Zr, Ti)O-3 (PZT) films were prepared on (11 I)Pt/TiO2/SiO2/Si substrates at 395degreesC by source-gas-pulsed-introduced metal-organic chemical vapor deposition (pulsed-MOCVD). The process window for obtaining the PZT single phase relative to the input source gas of lead was observed even at this low deposition temperature and became wider when the pressure of the reactor decreased from 670 to 67 Pa. This can be explained by the acceleration of the reevaporation of excess element of lead from the surface of the film. The width of the process window at 395degreesC and 67 Pa by pulsed-MOCVD was almost the same at 580degreesC and 670 Pa by conventional-source-gas-introduced MOCVD. The film deposited at 395degreesC showed good ferroelectricity with the remanent polarization value of 29 muC/cm(2). As a result, a highly-reproducible PZT film deposition compatible with the deposition at 580degreesC and 670 Pa was obtained even for the 395degreesC and 67 Pa deposition by pulsed-MOCVD.