期刊
PHYSICA B-CONDENSED MATTER
卷 329, 期 -, 页码 1531-1532出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0921-4526(02)02275-5
关键词
gallium nitride; thermal conductivity
We have measured thermal conductivity, kappa, in the wide temperature range 4-300 K of GaN bulk single crystals grown by high-pressure, high-temperature synthesis. Obtained results (1600 W/Km at 45 K) are the highest kappa values reported on GaN material. At the room temperature kappa is about 210 W/Km. The contributions to the GaN thermal resistance of Umklapp process, mass point defects as well as phonon scattering on dislocations and sample boundary are discussed. (C) 2003 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据