期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 50, 期 5, 页码 1246-1253出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2003.813236
关键词
flash memories; leakage currents; modeling; MOS device; oxide reliability; semiconductor device reliability; stress-induced leakage current (SILC)
A new physics-based model of leakage current suitable for MOS and Flash memory gate oxide is presented in this paper. This model, which assumes the multiphonon trap-assisted tunneling as conduction mechanism, calculates the total leakage current summing the contributions of the percolation paths formed by one or more aligned traps. Spatial positions and energetic levels of traps have been randomly generated within the oxide by a random number generator which has been integrated into the model. Using this model, statistical simulations of leakage currents measured from both MOS and Flash EEPROM memory tunnel oxides have been carried out. In this way, experimental leakage current distributions can be directly reproduced, thus opening a wide range of useful applications in MOS and Flash EEPROM memory reliability prediction.
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