A single source approach to deposition of nickel sulfide thin films by LP-MOCVD

Compounds of the type Ni(S2CNRR')(2), where RR' = Et-2 (1), MeEt (2), (MeBu)-Bu-n (3) and Me(n)Hex (4), have been synthesized and used as single-source precursors for the fabrication of binary nickel sulfide thin films via low-pressure metal-organic chemical vapour deposition. The phase of films deposited on glass substrates was found to be NiS1.03 or a mixture of NiS1.03 and NiS. The films have been characterised by X-ray powder diffraction, scanning electron microscopy, transition electron microscopy and energy dispersive analysis of X-rays. (C) 2003 Elsevier Science B.V. All rights reserved.