期刊
PHYSICAL REVIEW LETTERS
卷 90, 期 17, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.90.176401
关键词
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We analyze a single-electron transistor composed of two semi-infinite one-dimensional quantum wires and a relatively short segment between them. We describe each wire section by a Luttinger model, and treat tunneling events in the sequential approximation when the system's dynamics can be described by a master equation. We show that the steady-state occupation probabilities in the strongly interacting regime depend only on the energies of the states and follow a universal form that depends on the source-drain voltage and the interaction strength.
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