期刊
APPLIED PHYSICS LETTERS
卷 82, 期 18, 页码 3032-3034出版社
AMER INST PHYSICS
DOI: 10.1063/1.1572964
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We describe a nanometer-scale switch that uses a copper sulfide film and demonstrate its performance. The switch consists of a copper sulfide film, which is a chalcogenide semiconductor, sandwiched between copper and metal electrodes. Applying a positive or negative voltage to the metal electrode can repeatedly switch its conductance in under 100 mus. Each state can persist without a power supply for months, demonstrating the feasibility of nonvolatile memory with its nanometer scale. While biasing voltages, copper ions can migrate in copper sulfide film and can play an important role in switching. (C) 2003 American Institute of Physics.
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