期刊
APPLIED PHYSICS LETTERS
卷 82, 期 18, 页码 3020-3022出版社
AMER INST PHYSICS
DOI: 10.1063/1.1571666
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The effect of low-temperature annealing on (Ga,Mn)As/GaAs/(Ga,Mn)As trilayer structures is studied. Low-temperature annealing significantly increases the ferromagnetic transition temperature T-C of top (Ga,Mn)As layers, reaching as high as 160 K, whereas no apparent effect is observed on bottom (Ga,Mn)As layers. The annealing effect on Be-doped trilayers is also presented. (C) 2003 American Institute of Physics.
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