期刊
PHYSICAL REVIEW LETTERS
卷 90, 期 18, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.90.186602
关键词
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Resonant tunneling via localized states in the barrier can invert magnetoresistance in magnetic tunnel junctions. Experiments performed on electrodeposited Ni/NiO/Co nanojunctions of area smaller than 0.01 mum(2) show that both positive and negative values of magnetoresistance are possible. Calculations based on Landauer-Buttiker theory explain this behavior in terms of disorder-driven statistical variations in magnetoresistance with a finite probability of inversion due to resonant tunneling.
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