4.6 Article

The influence of Si-O-Zr bonds on the crystal-growth inhibition of zirconia prepared by the glycothermal method

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JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
卷 136, 期 1-3, 页码 186-189

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ELSEVIER SCIENCE SA
DOI: 10.1016/S0924-0136(03)00157-2

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glycothermal method; SiO2-modified ZrO2; FT-IR; crystal growth; Si-O-Zr bonds; Si-O-Si bonds

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SiO2-modified ZrO2 with the Si/Zr ratios of 0.04, 0.08, and 0.15 were prepared by the reaction of zirconium n-propoxide and tetraethyl orthosilicate in 1,4-butanediol. The products were characterized by FT-IR and XRD. The FT-IR spectra exhibit the presence of Si-O-Zr bonds formed during the reaction, indicating a high degree of powder homogeneity. The presence of Si-O-Zr bonds retards the crystal growth upon calcination. (C) 2003 Elsevier Science B.V. All rights reserved.

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