期刊
JOURNAL OF APPLIED PHYSICS
卷 93, 期 10, 页码 6787-6789出版社
AMER INST PHYSICS
DOI: 10.1063/1.1556110
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The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with x=0.015 to 0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the resistivity is observed, with a magnitude which is in agreement with Berry phase theories of the anomalous Hall effect in dilute magnetic semiconductors. (C) 2003 American Institute of Physics.
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