期刊
JOURNAL OF APPLIED PHYSICS
卷 93, 期 10, 页码 7870-7872出版社
AMER INST PHYSICS
DOI: 10.1063/1.1556122
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We have investigated FexTi1-xO2-delta (x = 0.02, 0.06, and 0.08) thin films grown on alpha-Al2O3 substrates by pulsed-laser deposition. X-ray diffraction results indicate that the films are single phase and of reduced-rutile type. Detailed microstructural observations reveal no measurable magnetic impurities in the films. Vibrating sample magnetometer measurements show the films are ferromagnetic at room temperature with coercivity ranging from 340 to 770 Oe. The temperature dependence of the resistivity shows nearly metallic behavior at room temperature but semiconducting behavior at lower temperatures. The extraordinary Hall effect with coercivities similar to those in magnetic hysteresis curves was observed at room temperature. The carriers are p type with a carrier density of about 10(22)/cm(3). (C) 2003 American Institute of Physics.
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