期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 36, 期 10A, 页码 A79-A82出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/36/10A/316
关键词
-
We report on x-ray microscopy of advanced microelectronic devices imaged in Zernike-type phase contrast mode at 4 keV photon energy. Fresnel zone plates were used as high resolution x-ray objectives providing 60 nm spatial resolution. Integrated circuit copper interconnect structures were imaged in positive as well as negative phase contrast. In both cases the phase contrast in the x-ray images is about five times higher than the pure absorption contrast.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据