期刊
MATERIALS CHEMISTRY AND PHYSICS
卷 80, 期 2, 页码 397-400出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0254-0584(03)00109-3
关键词
GaN; hydride vapor phase epitaxy; V defect; epitaxial lateral overgrowth; growth mechanism
Micron-size V defects were found on the hydride vapor phase epitaxy grown GaN films. When the film thickness increased, the diameter of V defects increased, but the density of the defects decreased. The defect has six {1 1 0 1} facets, which encircle to form a concave hexagonal pyramid. Its shape is similar to that of epitaxial lateral overgrowth (ELO) GaN crystal grown on a dot-patterned GaN underlying layer. Through the analysis of the growth mechanism of ELO GaN, the growth mechanism of the V defects was investigated. (C) 2003 Elsevier Science B.V. All rights reserved.
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