期刊
SOLID STATE COMMUNICATIONS
卷 126, 期 11, 页码 611-615出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1098(03)00304-1
关键词
nanocrystalline materials; semiconductors; mechanical alloying; differential scanning calorimetry (DSC); X-ray diffraction (XRD); Raman spectroscopy
Alloying of Ga with Se is observed in elemental Ga:Se = 50:50 mixture upon high-energy ball milling. X-ray diffraction of samples milled in the 1/2 < t < 3 h range displays evidence of hexagonal gallium selenide (GaSe). At longer milling times t > 10 h two wide bands are superimposed on the crystalline pattern, indicating that the main milling product at longer t is an amorphous phase. Differential scanning calorimetry shows that the amorphous phase is a Ga-Se phase and that it grows in concentration with t. Raman scattering provides modes of both amorphous and crystalline GaSe phases. (C) 2003 Elsevier Science Ltd. All rights reserved.
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