期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 15, 期 6, 页码 846-848出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2003.811339
关键词
metamorphic high-electron mobility transistor; (HEMT); photodetector; phototransistor; responsivity
The high optical responsivity of the InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels is reported. Experimental results verify that the photovoltaic effect causing the effective decrease of threshold voltage is responsible for the photoresponse to a 1.55-mum optical illumination.
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