期刊
JOURNAL OF APPLIED PHYSICS
卷 93, 期 11, 页码 8918-8925出版社
AMER INST PHYSICS
DOI: 10.1063/1.1571217
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The mosaicity of GaN layers grown by metalorganic vapor phase epitaxy, on (0001) sapphire and exhibiting different grain diameters is studied using high-resolution x-ray diffraction. The coherence lengths, the tilt and the twist of the mosaic structure are determined utilizing data taken in different x-ray scattering geometries. The results of different models, which were applied, are then compared and discussed. The dislocation densities, obtained from the x-ray data, are compared with the results of plan-view transmission electron microscopy and atomic force microscopy. (C) 2003 American Institute of Physics.
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