期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 50, 期 3, 页码 583-602出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2003.813129
关键词
charge collection; heavy ion irradiation; radiation effects; radiation hardening; single-event effects; single-event upset; soft errors; terrestrial cosmic rays
Physical mechanisms responsible for nondestructive single-event effects in digital microelectronics are reviewed, concentrating on silicon MOS devices and integrated circuits. A brief historical overview of single-event effects in space and terrestrial systems is given, and upset mechanisms in dynamic random access memories, static random access memories, and combinational logic are detailed. Techniques for mitigating single-event upset are described, as well as methods for predicting device and circuit single-event response using computer simulations. The impact of technology trends on single-event susceptibility and future areas of concern are explored.
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