期刊
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
卷 13, 期 2, 页码 192-195出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TASC.2003.813678
关键词
electron-beam lithography; reactive ion etching; single-photon detection; superconducting ultrathin NbN films
Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 mum wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed.
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