期刊
SENSORS
卷 3, 期 6, 页码 176-186出版社
MDPI
DOI: 10.3390/s30600176
关键词
nickel oxide; thick films; gamma radiation; PN-junction; interdigitated electrodes
Thick films of Nickel oxide (NiO) in the form of pn-junctions and planar structures with interdigitated electrodes were investigated for gamma-radiation dosimetry purposes. Samples were fabricated using the thick film screen-printing technique. All devices were exposed to a disc-type Cs-137 source with an activity of 370 kBq. They showed an increase in the values of current with the increase in radiation dose up to a certain level. Performance parameters of the devices, such as sensitivity to gamma-radiation exposure and working dose region, were found to be highly dependant on the composition of the materials used.
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