期刊
JOURNAL OF CRYSTAL GROWTH
卷 253, 期 1-4, 页码 239-242出版社
ELSEVIER
DOI: 10.1016/S0022-0248(03)01003-0
关键词
doping; zinc compounds; semiconducting II-VI materials
P-type zinc oxide films were prepared on glass substrates by pyrolysis of ultrasonically nebulized zinc-acetate-ammonia solution. UV-visible absorption spectra, X-ray diffraction, and Hall effect measurements were carried out. Results show that zinc oxide films prepared by this method are preferentially oriented with the c-axis perpendicular to the substrate surface. The results of Hall effect measurements show that p-type conducting ZnO films with hole concentrations as high as 2.5 x 10(17)cm(-3) were obtained by this method. (C) 2003 Elsevier Science B.V. All rights reserved.
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