期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
卷 42, 期 6A, 页码 3519-3522出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.42.3519
关键词
electrical and structural properties; lanthanum oxide; MOCVD; dielectric constant; leakage current density; post-annealing; interfacial layer
The electrical properties of lanthanum oxide was grown by using metal organic chemical vapor deposition (MOCVD) were investigated from the change of structural properties which occurred during the post-annealing process. The as-grown film had a dielectric constant of 18.8, and capacitance equivalent oxide thickness of 1.7 nm. The leakage current density of the film was measured as 2.4 x 10(-4) A/cm(2) at -1 MV/cm. When the film was annealed at 900degreesC, the dielectric constant decreased with the increase of the interfacial layer. [DOI: 10.1143/JJAP.42.3519].
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