期刊
IEEE ELECTRON DEVICE LETTERS
卷 24, 期 6, 页码 387-389出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2003.813381
关键词
capacitance density; HfO2; metal-insulator-metal (MIM) capacitor; sputter; voltage coefficient of capacitor (VCC)
Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/mum(2) have been achieved while maintaining the leakage current densities around 1 x 10(-8) A/cm(2) within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.
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