期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 50, 期 6, 页码 1459-1466出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2003.813503
关键词
contact resistance; FETs; leakage currents; modeling; molecular electronics; MOSFETs; nanotechnology; photons; physics; resistance; scattering; semiconductor device modeling; silicon
We model the influence of scattering along the channel and extension regions of dual gate nanotransistors. It is found that the reduction in drain current due to scattering in the right half of the channel is comparable to the reduction in drain current due to scattering in the left half of the channel, when the channel length is comparable to the scattering length. This is in contrast to a popular belief that scattering in the source end of a nanotransistor is significantly more detrimental to the drive current than scattering elsewhere. As the channel length becomes much larger than the scattering length, scattering in the drain-end is less detrimental to the drive current than scattering near the source-end of the channel. Finally, we show that for nanotransistors, the classical picture of modeling the extension regions as simple series resistances is not valid.
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