期刊
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
卷 3, 期 2, 页码 26-30出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2003.811602
关键词
copper diffusion; copper interconnect; dielectric breakdown; E model; time-dependent dielectric breakdown (TDDB)
Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu+, diffusion and drift is investigated. An analytical model to predict the lifetime of time-dependent dielectric breakdown is developed. The model predictions agree well with the previously published experimental data at different electric fields and temperatures. Under an acceleration stress condition, the lifetime is proportional to electric field exponentially and consistent with the E model.
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