4.3 Article

Modeling of time-dependent dielectric breakdown in copper metallization

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2003.811602

关键词

copper diffusion; copper interconnect; dielectric breakdown; E model; time-dependent dielectric breakdown (TDDB)

向作者/读者索取更多资源

Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu+, diffusion and drift is investigated. An analytical model to predict the lifetime of time-dependent dielectric breakdown is developed. The model predictions agree well with the previously published experimental data at different electric fields and temperatures. Under an acceleration stress condition, the lifetime is proportional to electric field exponentially and consistent with the E model.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.3
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据